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1

Mechanism of Thermal Interaction of In with GaAs

100%

Barcz A., Adamczewska J., Baranowski J., Kwiatkowski S.

Acta Physica Polonica A

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1993

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vol. 84

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issue 4

801-803

EN

General behavior of In/GaAs couple heat-treated at 570°C for 2 hours was studied with secondary-ion-mass spectrometry, scanning electron microscopy, Rutherford backscattering spectroscopy and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, In interacts with the substrate dislocations to form In(Ga)As dendrites. The driving force for this process is presumably excess arsenic reported to be present in the vicinity of the individual dislocations.

2

Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE

76%

Sadowski J., Grodzicka E., Dynowska E., Adamczewska J., Domagała J., Przedpelski W.

Acta Physica Polonica A

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1997

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vol. 92

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issue 5

967-970

EN

We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF_{2}(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10^{19} cm^{-3} to 10^{2 1} cm^{-3} depending on the MBE process parameters.

3

Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs

76%

Piotrowska A., Kamińska E., Guziewicz M., Adamczewska J., Kwiatkowski S., Turos A.

Acta Physica Polonica A

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1992

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vol. 82

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issue 5

857-860

EN

Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.

4

Shallow Ohmic Contact System to n-GaAs

76%

Kamińska E., Piotrowska A., Piotrowski T., Barcz A., Guziewicz M., Adamczewska J., Kwiatkowski S.

Acta Physica Polonica A

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1993

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vol. 84

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issue 4

804-806

EN

Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.

5

Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

76%

Misiuk A., Adamczewska J., Bąk-Misiuk J., Härtwig J., Morawski A., Witczak Z.

Acta Physica Polonica A

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1991

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vol. 80

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issue 3

317-320

EN

The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.

6

Changes of GaP: N Defect Structure under Hydrostatic Pressure

76%

Bąk-Misiuk J., Domagała J., Kozankiewicz B., Misiuk A., Adamczewska J., Skibska M.

Acta Physica Polonica A

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1993

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vol. 83

|

issue 1

87-93

EN

The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c_{N}, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c_{N} > 10^{20} at. cm^{-3}. The model explaining the hydrostatic pressure induced defect structure changes is proposed.

7

Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed

76%

Żymierska D., Godwod K., Adamczewska J., Auleytner J., Choiński J., Regiński K.

Acta Physica Polonica A

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2002

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vol. 101

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issue 5

743-750

EN

The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10^{14} ions· cm^{-2} dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.

8

Identification of Residual Impurities in Si-Doped MBE Grown GaAs

64%

Kaniewska M., Regiński K., Kaniewski J., Muszalski J., Ornoch L., Adamczewska J., Marczewski J., Bugajski M., Mizera E.

Acta Physica Polonica A

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1995

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vol. 88

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issue 4

775-778

EN

The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.

9

X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure

64%

Bąk-Misiuk J., Adamczewska J., Misiuk A., Regiński K., Wierzchowski W., Wieteska K., Kozanecki A., Kuritsyn D., Glukhanyuk W., Trela J.

Acta Physica Polonica A

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2002

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vol. 101

|

issue 5

689-699

EN

The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.

10

Electrical, Magnetic, and Structural Properties of Sn_{1-x}Mn_{x}Te Layers Grown by Molecular Beam Epitaxy

64%

Nadolny A., Sadowski J., Story T., Dobrowolski W., Arciszewska M., Świątek K., Kachniarz J., Adamczewska J.

Acta Physica Polonica A

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1998

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vol. 94

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issue 3

449-453

EN

Layers of Sn_{1-x}Mn_{x}Te (x ≤ 0.1) with thickness 0.2-2 μm were grown by molecular beam epitaxy on BaF_{2} substrates with a 0.01-1 μm thick SnTe buffer layer. Both SnTe and Sn_{1-x}Mn_{x}Te layers show metallic p-type conductivity with conducting hole concentrations (at T=77 K) p_{77}=7×10^{19} -2×10^{21} cm^{-3}. The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T_{C} ≤ 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10^{20} cm^{-3}) and remain paramagnetic in the temperature range studied T=4.5÷70 K.

Refine search results

Mechanism of Thermal Interaction of In with GaAs

Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE

Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs

Shallow Ohmic Contact System to n-GaAs

Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

Changes of GaP: N Defect Structure under Hydrostatic Pressure

Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed

Identification of Residual Impurities in Si-Doped MBE Grown GaAs

X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure

Electrical, Magnetic, and Structural Properties of Sn_{1-x}Mn_{x}Te Layers Grown by Molecular Beam Epitaxy