Due to the pinning of the Fermi energy to a localised donor state in Hg_{1-x}Fe_{x}Se the free carrier concentration oscillates in an applied external magnetic field. We measured the resulting modulations of the Hall resistance in fields up to 17.5 T and at temperatures between 4.2 K and 30 K.
Magnetooptical phenomena in the zero-gap semimagnetic semiconductor Hg(Fe)Se are studied by various techniques in pulsed magnetic fields up to 150 T. Microscopical parameters are estimated in combination with results obtained from transport and magnetization measurements.
We present the results of low temperature annealing studies of Ga_{1-x}Mn_xAs epilayers grown by low temperature molecular beam epitaxy in a wide range of Mn concentrations (0.01
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