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EN
We consider the problem of optimal estimation of a state of a quantum system interacting with the Bose field being in a mixture of the vacuum and coherent state. The system and electromagnetic field are described by making use of quantum stochastic unitary evolution. We derive stochastic master equation using Gardiner and Collet's input-output theory and the concept of cascade systems. To find the stochastic evolution of the system conditioned on the result of the quadrature measurement of the output field, we extend the compound system by an ancilla driven by the vacuum and generating the desired non-classical state of light.
EN
Many proteins in alive organisms have a domain structure providing them the possibility to reversible unfolding, which seems to play an essential role in those processes occurring in tissues which are controlled by mechanical cellular tension. In this work the atomic force microscopy was applied to investigate the mechanical properties of the single molecules of fibronectin, a protein participating in the important mechanical processes in extracellular matrix. The results showed that the conditions of mechanical stretching influence not only the force required to unfolding of a domain but also the increase in protein contour length induced by such unfolding event. Two mean values of the increase in length (called shortly the unfolding length) L_1 and L_2, were obtained and ascribed to unfolding of either the whole fibronectin domain of type III (L_2) or its fragment (L_1). Both unfolding lengths revealed similar dependence on the stretching conditions. This experimental observation of increase in unfolding length with increasing loading rate was successfully described with a combination of two theoretical models (Bell model and the worm-like-chain model), previously used separately in the analysis of protein unfolding. The general mechanical property of fibronectin domains was emphasized and proposed as a potential determinant of the cellular adhesion.
EN
Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
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