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Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN

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Kamińska E., Piotrowska A., Jasiński J., Kozubowski J., Barcz A., Gołaszewska K., Bremser M., Davis R.

Acta Physica Polonica A

1998

vol. 94

issue 3

383-386

The microstructure of Ni/Si-based contacts to GaN has been studied using transmission electron microscopy methods. The transition from non-ohmic to ohmic behavior appears to correlate with the initial limited reaction of GaN with Ni and further Si-Ni reaction-driven decomposition of the interfacial GaN-Ni phase.

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1 Acta Physica Polonica A

1 1998

1 Barcz A.

1 Bremser M.

1 Davis R.

1 Gołaszewska K.

1 Jasiński J.

1 Kamińska E.

1 Kozubowski J.

1 Piotrowska A.

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Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN