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  1. 1 Acta Physica Polonica A

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  1. 1 2015

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  1. 1 Güllü Ö.

  2. 1 Türüt A.

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Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer

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Güllü Ö., Türüt A.
Acta Physica Polonica A
|
2015
|
vol. 128
|
issue 3
383-388
EN
This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2.24×10^{13} eV^{-1} cm^{-2} to 5.56×10^{12} eV^{-1} cm^{-2}.
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