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  1. 1 Acta Physica Polonica A

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  1. 1 2000

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  1. 1 Anil Kumar P.

  2. 1 Lodder J.

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The Spin-Valve Transistor - a New Magnetoelectronic Device

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Anil Kumar P., Lodder J.
Acta Physica Polonica A
|
2000
|
vol. 97
|
issue 1
111-118
EN
A spin-valve transistor showing high sensitivity at low fields was developed. A large magnetocurrent, above 500% is realized by a magnetic field change of 2 to 4 Oe at 80 K. Hot electrons are injected into the spin-valve layer through a Si-Pt Schottky diode. These hot electrons, while traversing through the spin-valve, are spin-dependently scattered. Those electrons with right energy and momentum are collected by a collector (an Au-Si Schottky diode) constituting a collector current. The relative orientation of the magnetic layer in the spin-valve is changed by the application of a magnetic field and causes a change in collector current giving a large magnetocurrent.
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