Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Experimental Control of the Number of Ionized Donors in an AlGaAs/GaAs Heterostructure

100%
Denk P., Schlösser T., Ensslin K., Holland M.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 5
977-981
EN
The high mobility of electrons in AlGaAs-GaAs heterostructures relies on the concept of modulation doping. As a sample is cooled down to T = 4.2 K under a fixed gate bias the number of ionized donors can be frozen and is then independent on the gate potential. We discuss the consequences of this procedure on the electron density and mobility in a two-dimensional electron gas. For a laterally patterned sample we find that the amplitude of the potential modulation can be maximized for a given carrier density by a suitably chosen cool-down voltage.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.