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Doping of the Wide-Gap Semiconductor Cd_{1-x}Mg_{x}Te During Molecular Beam Epitaxy

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Fischer F., Litz T., Waag A., Heinke H., Scholl S., Gerschütz J., Landwehr G.

Acta Physica Polonica A

1995

vol. 87

issue 2

487-491

We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are considered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.

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1 Acta Physica Polonica A

1 1995

1 Fischer F.

1 Gerschütz J.

1 Heinke H.

1 Landwehr G.

1 Litz T.

1 Scholl S.

1 Waag A.

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Doping of the Wide-Gap Semiconductor Cd_{1-x}Mg_{x}Te During Molecular Beam Epitaxy