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Three-phase hybrid transformer using matrix-chopper as an interface between two AC voltage sources

100%
Kaniewski J., Fedyczak Z., Szcześniak P.
Archives of Electrical Engineering
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2014
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vol. 63
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issue 2
2
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The Strengthening of Weight Heavy Alloys During Heat Treatment

100%
Kaczorowski M., Skoczylas P., Krzyńska A., Kaniewski J.
Archives of Foundry Engineering
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2012
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issue 4
3
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PeakForce Tapping Technique for Characterization of Thin Organic Passivating Layers

100%
Papis-Polakowska E., Radkowski B., Lesko S., Kaniewski J.
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vol. 125
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issue 4
1056-1060
EN
The PeakForce Tapping technique was used for study of GaAs and GaSb surfaces treated by hexadecanethiol (HDT) - the sensitive self-assemble compound. The results of both surface morphology control and electrical properties characterization have been presented.
4
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Characterisation of (100) GaSb Passivated Surface Using Next Generation 3D Digital Microscopy

100%
Papis-Polakowska E., Leonhardt E., Kaniewski J.
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vol. 125
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issue 4
1052-1055
EN
(100) GaSb surface was modified by self-assembled superficial layer of organic molecules by wet chemical process. Hexadecanethiol (HDT) was the choice as modifier. The treated GaSb surface, whose quality affects the morphology of the resulting modified GaSb, was investigated by 3D digital microscopy. The structural study were carried out quickly, non-destructively and comprehensively with using the next generation 3D HIROX KH-8700 Digital Microscope.
5
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Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE

64%
Kaniewska M., Regiński K., Muszalski J., Kryńska D., Litkowiec A., Kaniewski J., Wesołowski M., Bugajski M.
Acta Physica Polonica A
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1996
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vol. 90
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issue 4
847-850
EN
Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.
6
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Identification of Residual Impurities in Si-Doped MBE Grown GaAs

64%
Kaniewska M., Regiński K., Kaniewski J., Muszalski J., Ornoch L., Adamczewska J., Marczewski J., Bugajski M., Mizera E.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
775-778
EN
The changes of dopant vaporization enthalpy in GaAs:Si grown by mole­cular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
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