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Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots

100%
Babinski A., Raymond S., Wasilewski Z., Lapointe J., Potemski A.
Acta Physica Polonica A
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2004
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vol. 105
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issue 6
547-552
EN
A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.
2
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The Fine Structure of a Triexciton in Single InAs/GaAs Quantum Dots

86%
Molas M., Gołasa K., Furman M., Lapointe J., Wasilewski Z., Potemski M., Babiński A.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
991-993
EN
Results of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization-sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ± 50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.
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Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer

73%
Babiński A., Czyż M., Golnik A., Borysiuk J., Kret S., Raymond S., Lapointe J., Wasilewski Z.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1055-1060
EN
It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T < 70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
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