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1

Optoelectronic Devices Employing One-Dimensional Photonic Structures

100%

Muszalski J.

Acta Physica Polonica A

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2008

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vol. 114

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issue 5

983-1000

EN

This paper reviews the experimental and theoretical results obtained during work on the modern semiconductor devices employing one-dimensional photonic structures. After short review of the physical features of structures consisting of 1D stack of the alternating high and low index layers, particular attention will be given to unique features of the devices employing microcavities: resonant cavity LEDs, resonant-cavity enhanced photo-detectors, vertical cavity surface emitting lasers, and also vertical external cavity surface emitting lasers. At the end the semiconductor saturable absorber mirrors are discussed.

2

LT-InGaAs Layer Grown for Near Surface SESAM Application

51%

Jasik A., Muszalski J., Kosmala M., Pierściński K.

Acta Physica Polonica A

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2009

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vol. 116

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issue S

S-56-S-59

EN

We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.

3

Deep Defects in Low-Temperature GaAs

51%

Korona K., Muszalski J., Kamińska M., Weber E.

Acta Physica Polonica A

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1992

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vol. 82

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issue 5

821-824

EN

Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.

4

Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)

51%

Wójcik-Jedlińska A., Muszalski J., Bugajski M., Łukowski M.

Acta Physica Polonica A

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2008

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vol. 114

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issue 5

1437-1443

EN

In this paper we demonstrate how the tuning of the VECSEL heterostructure can be precisely determined. Since the VECSEL active region is embodied in a microcavity, the photoluminescence signal collected from the chip surface is modified by the resonance of this cavity. The angle resolved photoluminescence measurements combined with the temperature tuning of the structure allowed us to precisely determine VECSEL emission features. The investigated structure consists of GaAs cavity with six InGaAs quantum wells and is designed for lasing at 980 nm.

5

Resonant Cavity Enhanced Photonic Devices

45%

Bugajski M., Muszalski J., Ochalski T., Kątcki J., Mroziewicz B.

Acta Physica Polonica A

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2002

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vol. 101

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issue 1

105-118

EN

In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In_xGa_{1-x}As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.

6

Ultrashort pulses supported by SESAM absorber

45%

Muszalski J., Jasik A., Wójcik M., Gaca J., Pierściński K.

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2010

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issue 4

7

FFirst TSC and DLTS Measurements of Low Temperature GaAs

39%

Muszalski J., Babiński A., Korona K., Kamińska E., Piotrowska A., Kamińska M., Weber E.

Acta Physica Polonica A

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1991

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vol. 80

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issue 3

413-416

EN

The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.

8

Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE

33%

Kaniewska M., Regiński K., Muszalski J., Kryńska D., Litkowiec A., Kaniewski J., Wesołowski M., Bugajski M.

Acta Physica Polonica A

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1996

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vol. 90

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issue 4

847-850

EN

Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.

9

Identification of Residual Impurities in Si-Doped MBE Grown GaAs

33%

Kaniewska M., Regiński K., Kaniewski J., Muszalski J., Ornoch L., Adamczewska J., Marczewski J., Bugajski M., Mizera E.

Acta Physica Polonica A

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1995

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vol. 88

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issue 4

775-778

EN

The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.

10

Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

33%

Godlewski M., Monemar B., Anderson T. G., Tsimperidis I., Gregorkiewicz T., Ammerlaan C. A. J., Muszalski J., Kaniewska M.

Acta Physica Polonica A

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1995

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vol. 88

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issue 5

990-994

EN

Optically detected cyclotron resonance is used for the identification of recombination transitions of two-dimensional electron gas in A1GaAs/GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These are the so-called H-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a long range carrier scattering on ionized impurities on a mobility of the two-dimensional carriers is studied.

11

Effect of Doping on Ga_{1-x}Al_{x}As Structural Properties

33%

Bąk-Misiuk J., Domagała J., Paszkowicz W., Trela J., Żytkiewicz Z. R., Leszczyński M., Regiński K., Muszalski J., Härtwig J., Ohler M.

|

EN

The microstructure of Ga_{1-x}Al_{x}As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.

12

High power QW SCH InGaAs/GaAs lasers for 980-nm band

27%

Bugajski M., Mroziewicz B., Regiński K., Muszalski J., Kosiel K., Zbroszczyk M., Ochalski T., Piwoński T., Wawer D., Szerling A., Kowalczyk E., Wrzesińska H., Górska M.

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2005

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vol. 53

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issue 2

Refine search results

Optoelectronic Devices Employing One-Dimensional Photonic Structures

LT-InGaAs Layer Grown for Near Surface SESAM Application

Deep Defects in Low-Temperature GaAs

Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)

Resonant Cavity Enhanced Photonic Devices

Ultrashort pulses supported by SESAM absorber

FFirst TSC and DLTS Measurements of Low Temperature GaAs

Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE

Identification of Residual Impurities in Si-Doped MBE Grown GaAs

Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

Effect of Doping on Ga_{1-x}Al_{x}As Structural Properties

High power QW SCH InGaAs/GaAs lasers for 980-nm band