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Defect Levels in Gallium Arsenide after Irradiation with Light Ions

100%

Schmidt T., Palmetshofer L., Lübke K.

Acta Physica Polonica A

1995

vol. 87

issue 2

543-546

Deep level centers in GaAs implanted with light ions (H^{+}, He^{+}) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling directly after the implantation process and after annealing at various temperatures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps efficiently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.

Metastability of Localized Neutral Donor State In GaAs

88%

Skierbiszewski C., Jantsch W., Lübke K., Wilamowski Z., Suski T.

Acta Physica Polonica A

1995

vol. 88

issue 5

905-908

Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised "A₁" state of the donor. We find that the top of the barrier for the electron recapture to the Α₁ state is pinned to the conduction band edge and the capture cross-section σ(T → ∞) is surprisingly small.

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2 Acta Physica Polonica A

2 1995

2 Lübke K.

1 Jantsch W.

1 Palmetshofer L.

1 Schmidt T.

1 Skierbiszewski C.

1 Suski T.

1 Wilamowski Z.

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Defect Levels in Gallium Arsenide after Irradiation with Light Ions

Metastability of Localized Neutral Donor State In GaAs