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Analysis of Charge Versus the Surface Fermi Level Position at Silicon Surface

100%
Adamowicz B.
Acta Physica Polonica A
|
1992
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vol. 81
|
issue 2
303-308
EN
The surface charge Q_{sc} versus the surface Fermi level position Φ_{s} for real (111) surfaces of p- and n-type Si has been studied. The values of Q_{sc} have been obtained on the basis of measurements of the surface potential V_{s} by means of the surface photo voltage method. The complementary character of Q_{sc}(Φ_{s}) dependences for the surfaces of p- and n-type Si supports the fact that the surface state distribution is not dependent on the type of bulk doping but on the surface preparation process.
2
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Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions

51%
Adamowicz B., Ottaviani C., Quaresima C., Perfetti P.
Acta Physica Polonica A
|
1995
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vol. 88
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issue 4
663-666
EN
We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n- and p-doped InP substrates. The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.
3
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The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

39%
Matys M., Miczek M., Adamowicz B., Żytkiewicz Z., Kamińska E., Piotrowska A., Hashizume T.
Acta Physica Polonica A
|
2011
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vol. 120
|
issue 6A
A-73-A-75
EN
The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from 10^{15} to 10^{19} photon cm^{-2} s^{-1}) for n-GaN samples with various surface passivating layers (Al_2O_3, SiO_2).
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