Search results

Sort By:

Limit search:

Thermally Induced Intermixing of InGaAs/GaAs Single Quantum Wells

100%

Kozanecki A., Gillin W., Sealy B.

Acta Physica Polonica A

1993

vol. 84

issue 4

621-624

In this work interdiffusion and strain relaxation in In_{0.2}Ga_{0.8}As/GaAs single quantum wells subjected to rapid thermal annealing have been studied using photoluminescence and Rutherford backscattering of 1.5 MeV He^{+} ions. It has been found that the diffusion coefficient of In atoms in GaAs, evaluated from the photoluminescence spectra for the assumed Gaussian well shapes, agrees within 30% with that obtained using Rutherford backscattering. Channeling angular scans, through the ⟨110⟩ axial direction of the heterostructures indicate that strain relaxation in the intermixed wells is exclusively due to compositional shallowing of the wells.

Infrared Luminescence in Er and Er+O Implanted 6H SiC

76%

Kozanecki A., Jantsch W., Heis W., Prechtl G., Sealy B., Jeynes C.

Acta Physica Polonica A

1997

vol. 92

issue 5

879-882

Photoluminescence in the neighbourhood of 1.54 μm due to the ^{4}I_{13/2}-^{4}I_{15/2} intra-4f-shell transitions of Er^{3+} ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.

Refine search results

2 Acta Physica Polonica A

1 1997

1 1993

2 Kozanecki A.

2 Sealy B.

1 Gillin W.

1 Heis W.

1 Jantsch W.

1 Jeynes C.

1 Prechtl G.

Search results

Thermally Induced Intermixing of InGaAs/GaAs Single Quantum Wells

Infrared Luminescence in Er and Er+O Implanted 6H SiC