Currently, manufacturers of power-electronic components are trying to introduce the silicon carbide (SiC) technology in their products and MOSFET transistors made with this technology are available on the market. They are characterised by a significantly higher operating frequency, reaching even 100 kHz and low switching losses. The application of this type of devices causes high voltage gradients at the inverter output, which can lead to increased inverter electromagnetic disturbances. This article presents test results and a high-frequency analysis, allowing for a preliminary evaluation of the use of SiC transistors in inverters in the context of electromagnetic compatibility.
The paper presents the load currents of two tram traction substations. These substations power lines with different characteristics of tram traffic. Loads were analysed for one working day and one public holiday. Attention was paid to the differences and similarities in the current waveforms. The demand level was assessed, with respect to the rectifier units in the substations. The time series method was used, inter alia, and chiefly an analysis of the characteristics of autoregression and partial autoregression was carried out, to act as a diversity index with respect to the nature of variability in the analysed traction load currents.
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