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Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

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Poklonski N., Gorbachuk N., Nha V., Shpakovski S., Filipenya V., Skuratov V., Kołtunowicz T., Kukharchyk N., Becker H., Wieck A.

Acta Physica Polonica A

2015

vol. 128

issue 5

891-893

Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.

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1 Acta Physica Polonica A

1 2015

1 Becker H.

1 Filipenya V.

1 Gorbachuk N.

1 Kołtunowicz T.

1 Kukharchyk N.

1 Nha V.

1 Poklonski N.

1 Shpakovski S.

1 Skuratov V.

1 Wieck A.

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Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes