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EN
The design, technology and main characteristics of Ag contacts as well as "loop effect" peculiarities of colossal magnetoresistance B-scalar high magnetic field sensor based on La_{1-x}(Ca)Sr_x MnO_3 films used for measuring high magnetic field pulses are presented.
EN
The magnetoresistance anisotropy of ultrathin La_{0.83}Sr_{0.17}Mn O_3 films deposited on NdGaO_3 substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (< 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers.
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