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Blue Laser on High N_2 Pressure-Grown Bulk GaN

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Grzegory I., Boćkowski M., Krukowski S., Łucznik B., Wróblewski M., Weyher J., Leszczyński M., Prystawko P., Czernecki R., Lehnert J., Nowak G., Perlin P., Teisseyre H., Purgał W., Krupczyński W., Suski T., Dmowski L., Litwin-Staszewska E., Skierbiszewski C., Łepkowski S., Porowski S.

Acta Physica Polonica A

2001

vol. 100

issue Supplement

229-232

In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).

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1 Acta Physica Polonica A

1 2001

1 Boćkowski M.

1 Czernecki R.

1 Dmowski L.

1 Grzegory I.

1 Krukowski S.

1 Krupczyński W.

1 Lehnert J.

1 Leszczyński M.

1 Litwin-Staszewska E.

1 Nowak G.

1 Perlin P.

1 Porowski S.

1 Prystawko P.

1 Purgał W.

1 Skierbiszewski C.

1 Suski T.

1 Teisseyre H.

1 Weyher J.

1 Wróblewski M.

1 Łepkowski S.

1 Łucznik B.

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Blue Laser on High N_2 Pressure-Grown Bulk GaN