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Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures

100%

Kozhukhov A., Konarski P., Herman M.

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EN

Depth profiling analysis of In_{x}Ga_{1-x}As heterolayers grown by MBE on Fe doped InP(100) substrates was performed in the SAJW-02 secondary ion mass spectrometry analyser equipped with 4.5 keV O_{2}^{+} ion source and a specially designed sample manipulator enabling depth profiling in the standard as well as in so-called Zalar rotation operation modes. The fairly high energy of the primary ion beam required for sputtering in secondary ion mass spectrometry measurements causes changes in surface topography, usually of different origin. Depth resolution parameters and roughness formation monitored by scanning electron microscopy were analysed for a set of samples with composition x changing in the range 0.33 to 0.60. The results were compared with the same data for a layer of x=0.53 (best lattice-matched to InP) grown on the top of a three monolayer thick AlAs film deposited previously on the InP substrate. Improvement in the depth profile resolution was revealed for the structure with an AlAs layer indicating sharper interface transition. Moreover, sample rotation applied for this structure improves further the depth profiling resolution. Thus, we showed for the first time that a very thin AlAs layer grown by MBE between the InP substrate and the In_{0.53}Ga_{0.47}As improves considerably the heterointerface properties and that Zalar rotation applied for depth profiling of the investigated material system diminishes further the negative effects of ion etching on depth resolution in secondary ion mass spectrometry analysis.

2

The Effect of Phosphorus Incorporation into SiO_2/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure

88%

Król K., Konarski P., Miśnik M., Sochacki M., Szmidt J.

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vol. 126

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issue 5

1100-1103

EN

This paper describes the influence of phosphorus incorporation into SiO_2/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated - the diffusion-based process of POCl_3 annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at E_{V} + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.

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Depth Profile Analysis of Phosphorus Implanted SiC Structures

76%

Konarski P., Król K., Miśnik M., Sochacki M., Szmidt J., Turek M., Żuk J.

Acta Physica Polonica A

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2015

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vol. 128

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issue 5

864-866

EN

Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.

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3 Acta Physica Polonica A

1 2015

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3 Konarski P.

2 Król K.

2 Miśnik M.

2 Sochacki M.

2 Szmidt J.

1 Herman M.

1 Kozhukhov A.

1 Turek M.

1 Żuk J.

Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures

The Effect of Phosphorus Incorporation into SiO_2/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure

Depth Profile Analysis of Phosphorus Implanted SiC Structures