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RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

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Ratajczak R., Stonert A., Guziewicz E., Gierałtowska S., Krajewski T., Luka G., Wachnicki L., Witkowski B., Godlewski M.

Acta Physica Polonica A

2013

vol. 123

issue 5

899-903

The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

81%

Krajewski T., Luka G., Smertenko P., Zakrzewski A., Dybko K., Jakiela R., Wachnicki L., Gieraltowska S., Witkowski B., Godlewski M., Guziewicz E.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-17-A-21

The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.

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2 Acta Physica Polonica A

1 2013

1 2011

2 Godlewski M.

2 Guziewicz E.

2 Krajewski T.

2 Luka G.

2 Wachnicki L.

2 Witkowski B.

1 Dybko K.

1 Gieraltowska S.

1 Gierałtowska S.

1 Jakiela R.

1 Ratajczak R.

1 Smertenko P.

1 Stonert A.

1 Zakrzewski A.

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RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications