Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 18

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Kinetics of Formation and Metastability Mechanism for Thermal Donor-Related Defects in Al-Doped Silicon

100%
Kaczor P.
|
EN
We present a detailed investigation of the growth kinetics of aluminium-related shallow thermal donors: the K-donors. Constraints for the diffusion mechanism of oxygen in silicon at temperatures ≈ 470°C are found. A large entropy of the K-donors is considered as a possible explanation of high diffusivities and interaction radii found for the generation of the K-donors.
2
Content available remote

A Role of Intermediate Charge State in the DX Center Photoionisation in Al_{x}Ga_{1-x}As:Se

64%
Kaczor P., Żytkiewicz Z.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
801-804
EN
Detailed studies of the DX center absorption are presented. They. studies performed on thick AlGaAs:Te layers, give a strong indication for the influence of the intermediate charge state on the DX center photoionisation.
3
Content available remote

New DX-Related Photoinduced Absorption in AlGaAs:Te

64%
Kaczor P., Żytkiewicz Z.
Acta Physica Polonica A
|
1991
|
vol. 80
|
issue 3
397-400
EN
Absorption measurements on thick AlGaAs:Te layers reveal a new absorption band at ca. 0.55 eV. Also the absorption coefficient of the DX-center ground state was measured directly for the first time.
4
Content available remote

Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon

51%
Kopalko K., Kaczor P., Godlewski M., Gregorkiewicz T.
Acta Physica Polonica A
|
1991
|
vol. 80
|
issue 3
345-348
EN
Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD^{+} . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.
5
Content available remote

Optical and Electrical Properties of Bulk GaSb and AlGaSb

51%
Kaczor P., Żytkiewicz Z. R., Dobosz D., Kaliński Ż.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 4
763-766
EN
Optical measurements of bulk GaSb:S reveal the structure of the lattice two phonon absorption and acceptor-valence band transitions. A sulphur re­lated local vibrational modes and several bands related to the optical transi­tions from the ground state of the acceptor level are observed. A comparison of transport and optical measurements for GaSb:Te and AlGaSb:Te shows that in the alloy it is easier to obtain high concentrations of the electrically active Te impurity.
6
Content available remote

New Local Vibrational Modes Related to Silicon in Bulk AlGaAs

51%
Kaczor P., Żytkiewicz Z. R., Dobaczewski L.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 4
759-762
EN
A silicon-related local vibrational mode absorption in AlGaAs is re­ported for the first time. It consists of six peaks grouped around 450 cm^{-1} which form a distinct pattern. We believe that the new local vibrational mode absorption is a fingerprint of a single defect. Among the discussed mi­croscopic structures the most plausible is a Si_{Ga}-Si_{As} pair complex with Si_{As} acceptor interacting with different Ga, Al nearest neighbour local environ­ments.
7
Content available remote

Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon

51%
Kaczor P., Kopalko K., Godlewski M., Gregorkiewicz T.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 4
677-680
EN
A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
8
Publication available in full text mode
Content available

Vacuum brazing of stainless steel depending on the surface preparation methodand temperature of the process

51%
Hebda M., Kaczor P., Miernik K.
Archives of Metallurgy and Materials
|
2019
|
vol. 64
|
issue 1
9
Content available remote

Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon

51%
Kaczor P., Godlewski M., Gregorkiewicz T.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 3
555-558
EN
In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
10
Content available remote

Two Charge States of Sulphur in GaSb

51%
Dobaczewski L., Kaczor P., Karczewski G., Poole I.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 1
133-136
EN
Results of the isothermal DLTS, photoconductivity, and photo-Hall measurements, showed that the sulphur-related center in GaSb, being a DX-type defect, has two charge states.
11
Publication available in full text mode
Content available

Infrared Spectroscopy of Light Impurities in GaSb

51%
Kaczor P., Kaliński Z., Jakieła R.
Acta Physica Polonica A
|
2005
|
vol. 108
|
issue 4
711-715
EN
In our work we study the doping behaviour of sulphur in Czochralski grown GaSb by means of the high resolution Fourier transform infrared spectroscopy and the secondary ion mass spectroscopy. We have revealed that the sulphur impurity forms an effective mass like donor state bound to the L-minimum of the conduction band. From the far infrared spectrum of this donor we derive the effective band masses of the L band minimum. We also observe local vibrational modes related to the arsenic and phosphorus isoelectronic impurities. From the nearest neighbour isotope splittings of these modes we conclude that the arsenic impurity occupies a tetrahedral substitutional site and the phosphorus impurity - a low symmetry lattice site.
12
Content available remote

Absorption Studies of the Sulphur Donor in GaSb

45%
Kaczor P., Gerrits A., Dobaczewski L., Kaliński Z., Wittlin A.
Acta Physica Polonica A
|
1995
|
vol. 87
|
issue 2
399-402
EN
The shallow-deep bistability of the sulphur-related DX centre in GaSb is demonstrated. After photoexcitation of the defect with the near-band gap light the metastable inter-donor transition in the far infrared can be ob­served. This observation allowed us to evaluate the polaron effective mass and polaron coupling constant for the material.
13
Publication available in full text mode
Content available

Band Structure of Mn/ZnTe Studied, by Angle-Resolved Photoelectron Spectroscopy

39%
Kowalski B., Orlowski B., Pietrzyk M., Kaczor P., Kopalko K., Mickievicius S., Johnson R.
Acta Physica Polonica A
|
2005
|
vol. 108
|
issue 5
735-740
EN
The electronic band structure of Mn/ZnTe(110) (1×1) has been studied by angle-resolved photoelectron spectroscopy. The sets of spectra were acquired for the clean surface and after in situ deposition of 0.4 ML of Mn, in order to compare the band structures and to reveal changes brought about by the presence of Mn. The experimental band structure diagram of Mn/ZnTe along theΓ-K direction in the Brillouin zone has been derived from the experimental data. Indications of interaction between the Mn 3d states and sp^3 bands of the semiconductor are discussed.
14
Content available remote

Energy Level Position of Ni and Band Offsets in Zn_{1-x}Cd_{x}Sc:Ni and ZnS_{x}Sc_{1-x}:Ni

39%
Surkova T., Giriat W., Godlewski M., Kaczor P., Zakrzewski A. J., Permogorov S., Tenishev L.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 5
925-928
EN
Absorption and reflectivity measurements have been carried out for Zn_{1-x}Cd_{x}Se:Ni and ZnS_{x}Se_{1-x}:Ni solid solutions. Energy level positions of nickel 2+/1+ charge state have been used for estimation of band offsets for the valence and conduction bands of ZnCdSe/ZnSe and ZnSSe/ZnSe. Intra-shell transitions of Ni^{2+} were also studied.
15
Content available remote

Optical and Electrical Studies of FR1 and FR2 Defects in GaAs

39%
Dwiliński R., Palczewska M., Kaczor P., Korona K., Wysmołek A., Bożek R., Kamińska M.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 4
613-616
EN
The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
16
Content available remote

Formation of the DX State by Donors in Al_{x}Ga_{1-x}As - Experiment

39%
Dobaczewski L., Kaczor P., Missous M., Żytkiewicz Z., Dobosz D., Peaker A.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
905-907
EN
A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.
17
Content available remote

Highly Compensated GaAs Crystal Obtained by Molecular CO Doping

39%
Bożek R., Korona K., Nowak G., Wasik D., Słupiński T., Kaczor P.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
669-672
EN
GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p_{CO}/p_{tot} = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10^{7} Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.
18
Content available remote

Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy

39%
Kaczor P., Ashwin M., Dobosz D., Żytkiewicz Z., Newman R., Dobaczewski L.
|
EN
Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al_{x}Ga_{1-x}As samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si_{Ga} donors, Si_{As} acceptors and Si_{Ga}-Si_{As} pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm^{-1} are discussed in relation to possible perturbations of the lines from Si_{Ga} or Si_{As}. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.