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A Photoacoustic Study of Xenon Implantation in CuInSe_2

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Satour F., Zegadi A., Merabet A.
Acta Physica Polonica A
|
2011
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vol. 120
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issue 6A
A-31-A-33
EN
In this paper, we report a study on the optical properties of xenon ion implanted CuInSe_2 single crystals using a high resolution near-infrared photoacoustic spectrometer of the gas-microphone type. Samples of high quality of CuInSe_2, p-type conducting, have been implanted with Xe^{+} at 40 keV with doses of 5 × 10^{15}, 10^{16} and 5 × 10^{16} ions/cm^2. Photoacoustic spectra have been measured before and after implantation. A newly developed theoretical model based on a two-layer sample configuration has been used to single out the spectral dependence of the absorption coefficient of the implanted layer from that of the substrate. The absorption spectra were used to evaluate the gap energy and to establish ionization energies for several shallow and deep defect states. The resulting effects following the introduction of xenon into CuInSe_2 at different doses are discussed in the light of published literature.
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Effect of Spectral Irradiance Distribution on the Performance of Solar Cells

100%
Guechi A., Chegaar M., Merabet A.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 6A
A-43-A-46
EN
In this paper, the global and diffuse solar radiation incident on solar cells is simulated using a spectral model SMARTS2, for varying atmospheric conditions on the site of Setif. The effect of changes in total intensity and spectral distribution on the short circuit current and efficiency of different kinds of thin film solar cells (CdTe, nc-Si:H and copper indium gallium selenide, CIGS) is examined. The results show a reduction in the short circuit current due to increasing turbidity. It is 18.82%, 27.06% and 26.80% under global radiation and for CdTe, nanocrystalline silicon (nc-Si:H), and CIGS solar cells, respectively. However it increases under diffuse radiation. Increasing water vapor in the atmosphere leads to a reduction in the short circuit current of 3.15%, 2.38%, and 2.45%, respectively, for CdTe, nc-Si:H, and CIGS cells under global radiation and it is not influenced under diffuse radiation. The performance of the solar cells is notably reduced, both in terms of efficiency and open circuit voltage, with increasing air mass.
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