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Magnetic Anisotropy in (Ge,Mn)Te Layers

100%
Knoff W., Łusakowski A., Wołoś A., Story T.
Acta Physica Polonica A
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2015
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vol. 127
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issue 2
404-406
EN
Ferromagnetic resonance study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor (Ge,Mn)Te with Mn content of 12 and 21 at.% grown by molecular beam epitaxy on BaF₂ (111) substrates. The layers with low Mn content grow in the rhombohedral crystal structure and exhibit perpendicular magnetic anisotropy whereas the layers with Mn content higher than about 20 at.% are of cubic (rock-salt) structure and show regular easy-plane type magnetic anisotropy. The quantitative analysis of the angular dependence of the ferromagnetic resonant field is performed taking into account the magnetic energy contributions due to rhombohedral distortion (axial term along the (111) growth direction of the layer) and the crystal field terms allowed for ferromagnetic systems of rhombohedral symmetry.
2
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Measurement of Very Small Zeeman Splittings in GaN:Mn,Mg by Faraday Rotation

64%
Wołoś A., Kossacki P., Golnik A., Kamińska M., Gaj J., Twardowski A., Grzegory I., Boćkowski M., Porowski S.
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issue 4-5
695-699
EN
In this work we demonstrate an application of Faraday rotation for measuring an extremely small Zeeman splitting of an Mn related absorption line placed at 1.417 eV in optical absorption spectrum of Mn and Mg doped gallium nitride. Analysis of the collected spectra allowed us to determine the value of the splitting as equal to 0.12±0.01 meV at 6 T. This data should help in establishing the nature of the observed absorption band.
3
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Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition

64%
Łukasiewicz M., Cabaj A., Godlewski M., Guziewicz E., Wittlin A., Jaworski M., Wołoś A., Wilamowski Z.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
911-913
EN
Electrical and magnetic properties of ZnCoO thin films grown on silicon substrates by atomic layer deposition method are investigated. The films were grown using reactive organic precursors of zinc and cobalt. The use of these precursors allowed us the significant reduction of a growth temperature to 200°C and below, which proved to be very important for the growth of uniform films of ZnCoO. We have measured the microwave AC conductivity and EPR for two types of ZnCoO samples, with different Co fractions.
4
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Mn Impurity in Bulk GaAs Crystals

64%
Pawłowski M., Piersa M., Wołoś A., Palczewska M., Strzelecka G., Hruban A., Gosk J., Kamińska M., Twardowski A.
Acta Physica Polonica A
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2005
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vol. 108
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issue 5
825-830
EN
Magnetic and electron transport properties of GaAs:Mn crystals grown by Czochralski method were studied. Electron spin resonance showed the presence of Mn acceptor A in two charge states: singly ionized A^- in the form of Mn^{2+}(d^5), and neutral A^0 in the form of Mn^{2+}(d^5) plus a bound hole (h). It was possible to determine the relative concentration of both types of centers from intensity of the corresponding electron spin resonance lines. Magnetization measured as a function of magnetic field (up to 6 T) in the temperature range of 2-300 K revealed overall paramagnetic behavior of the samples. Effective spin was found to be about 1.5 value, which was consistent with the presence of two types of Mn configurations. In most of the studied samples the dominance of Mn^{2+}(d^5)+h configuration was established and it increased after annealing of native donors. The total value of Mn content was obtained from fitting of magnetization curves with the use of parameters obtained from electron spin resonance. In electron transport, two mechanisms of conductivity were observed: valence band transport dominated above 70 K, and hopping conductivity within Mn impurity band at lower temperatures. From the analysis of the hopping conductivity and using the obtained values of the total Mn content, the effective radius of Mn acceptor in GaAs was estimated as a = 11±3Å.
5
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Mn Impurity in GaN Studied by Electron Paramagnetic Resonance

64%
Wołoś A., Palczewska M., Wilamowski Z., Kamińska M., Twardowski A., Boćkowski M., Grzegory I., Porowski S.
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EN
We present the results of electron paramagnetic resonance investigations of GaN bulk crystals doped with Mn. The EPR experiment shows the Mn^{2+} resonance in all the investigated n-type crystals, while in highly resistive samples extra doped with Mg acceptor the Mn^{2+} resonance decreases. This is a consequence of the location of Mn acceptor level in GaN band gap. The analysis of the spin relaxation times reveals the Korringa scattering as the dominating spin relaxation mechanism in n-type GaN:Mn crystals. The effective exchange constant determined from spin relaxation rate temperature dependence is of the order of 14 meV.
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