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  1. 39 Acta Physica Polonica A

  2. 1 Bulletin of the Polish Academy of Sciences: Technical Sciences

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  1. 40 Kamińska E.

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1
Content available remote

Fabrication and Properties of Amorphous Zinc Oxynitride Thin Films

100%
Kaczmarski J., Borysiewicz M., Pągowska K., Kamińska E.
Acta Physica Polonica A
|
2016
|
vol. 129
|
issue 1
150-152
EN
Zn-O-N thin films fabricated by reactive radio frequency magnetron sputtering have been investigated for their compositional, structural, transport and optical properties. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous films with the Hall mobility within the range from 15 to 80 cm²/(V s). In addition, it has been observed that the Hall mobility increases for Zn-O-N. Since it has a narrower bandgap than ZnO, it is put forward that the high mobility is due to the valence band maximum in this material lying above the trap states in the gap commonly observable in ZnO. These traps originate from oxygen vacancies and are localized at the bottom of the band gap influencing the carrier mobility.
2
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Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces

100%
Kamińska E., Piotrowska A., Kasjaniuk S., Gierlotka S.
Acta Physica Polonica A
|
1996
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vol. 90
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issue 4
843-846
EN
The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization.
3
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Investigation of Phosphorus Release during Annealing of Au Contacts to InP

100%
Piotrowska A., Kamińska E., Kwiatkowski S., Turos A.
Acta Physica Polonica A
|
1992
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vol. 82
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issue 5
849-852
EN
The analysis of phosphorus release from Au/InP contacts heat treated at temperature from the range 360-480°C showed that P evaporation accompanies any stage of contact reaction. The use of encapsulating layer during contact annealing suppresses the loss of phosphorus and changes the kinetics of thermally activated interfacial reaction.
4
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Interaction between Thin Films of Zinc and (100) GaAs

100%
Kamińska E., Piotrowska A., Żarecka R., Mizera E.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 3
527-529
EN
Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360°C the formation of Zn_{3}As_{2} phase, highly oriented with respect to the (100) substrate takes place.
5
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Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition

88%
Borysiewicz M., Wojciechowski T., Dynowska E., Kamińska E., Piotrowska A.
|
|
vol. 125
|
issue 5
1144-1148
EN
Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
6
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Interfacial Reactions between Thin Films of Zinc and (100)InP

88%
Kamińska E., Piotrowska A., Barcz A., Mizera E., Dynowska E.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 4
771-774
EN
The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and trans­mission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn_{3}P_{2} phase lattice matched to InP.
7
Publication available in full text mode
Content available

Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation

88%
Łusakowski J., Knap W., Kamińska E., Piotrowska A., Gavrilenko V.
Acta Physica Polonica A
|
2003
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vol. 103
|
issue 6
545-551
EN
Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
8
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Non-Ohmic Conductivity of High Resistivity CdTe

76%
Łusakowski J., Szczytkowski J., Szadkowski K., Kamińska E., Piotrowska A., Karczewski G., Wojtowicz T.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
803-806
EN
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown lay­ers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the cur­rent flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
9
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Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

76%
Kaczmarski J., Taube A., Dynowska E., Dyczewski J., Ekielski M., Kamińska E., Piotrowska A.
Acta Physica Polonica A
|
2013
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vol. 124
|
issue 5
855-857
EN
In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm^2/(Vs) has been demonstrated.
10
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FFirst TSC and DLTS Measurements of Low Temperature GaAs

76%
Muszalski J., Babiński A., Korona K., Kamińska E., Piotrowska A., Kamińska M., Weber E.
Acta Physica Polonica A
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1991
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vol. 80
|
issue 3
413-416
EN
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
11
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Evolution of Pb_{1-x}Cd_{x}Te Solid Solution Structure at High Temperatures

76%
Minikayev R., Dynowska E., Kamińska E., Szczerbakow A., Trots D., Story T., Szuszkiewicz W.
Acta Physica Polonica A
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2011
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vol. 119
|
issue 5
699-701
EN
The recent successful growth of single, bulk Pb_{1-x}Cd_{x}Te crystals by self-selecting vapor transport method at the Institute of Physics of the Polish Academy of Sciences in Warsaw opened new opportunities to study the physical properties of this interesting material in detail. In this work we report the preliminary results of X-ray powder diffraction studies performed on a set of Pb_{1-x}Cd_{x}Te solid solutions (where x ≤ 0.056) at high temperatures (295 K ≤ T ≤ 1100 K) and analyzed with the Rietveld refinement. Our results demonstrate the necessity of some correction of the relevant phase diagram and of the solubility limit, known from the literature.
12
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Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts

76%
Kamińska E., Piotrowska A., Żarecka R., Barcz A., Mizera E., Kwiatkowski S.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
853-856
EN
Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
13
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Direct Measurements of Arsenic and Phosphorus Evolution During Cap-Annealing of Gold-Based Metallizations on GaAs and InP

76%
Piotrowska A., Kamińska E., Guziewicz M., Veresegyhazy R., Mojzes I., Pecz B.
Acta Physica Polonica A
|
1991
|
vol. 80
|
issue 3
457-460
EN
Evolution of arsenic and phosphorus during heat treatment of unprotected and encapsulated Au, AuZn and AuGeNi contacts on GaAs and InP has been examined and correlated with their ohmic behavior.
14
Content available remote

Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN

76%
Borysiewicz M., Kamińska E., Piotrowska A., Pasternak I., Jakieła R., Dynowska E.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 5
1061-1066
EN
Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
15
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Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs

76%
Piotrowska A., Kamińska E., Guziewicz M., Adamczewska J., Kwiatkowski S., Turos A.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
857-860
EN
Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
16
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Shallow Ohmic Contact System to n-GaAs

76%
Kamińska E., Piotrowska A., Piotrowski T., Barcz A., Guziewicz M., Adamczewska J., Kwiatkowski S.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
804-806
EN
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
17
Content available remote

High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

76%
Taube A., Kruszka R., Borysiewicz M., Gierałtowska S., Kamińska E., Piotrowska A.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 6A
A-22-A-24
EN
The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with SiO_2 and HfO_2/SiO_2 gate stacks. From the Terman method low density of interface traps (D_{it} ≈ 10^{11} eV^{-1} cm^{-2}) at SiO_2/GaN interface was calculated for as-deposited samples. Samples with HfO_2/SiO_2 gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of SiO_2/GaN interface shows applicability of SiO_2 as a gate dielectric in GaN MOSFET transistors.
18
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The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

76%
Matys M., Miczek M., Adamowicz B., Żytkiewicz Z., Kamińska E., Piotrowska A., Hashizume T.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 6A
A-73-A-75
EN
The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from 10^{15} to 10^{19} photon cm^{-2} s^{-1}) for n-GaN samples with various surface passivating layers (Al_2O_3, SiO_2).
19
Publication available in full text mode
Content available

Monocrystalline and Polycrystalline ZnO and ZnMnO Films Grown by Atomic Layer Epitaxy - Growth and Characterization

65%
Wójcik A., Kopalko K., Godlewski M., Łusakowska E., Paszkowicz W., Dybko K., Domagała J., Szczerbakow A., Kamińska E.
Acta Physica Polonica A
|
2004
|
vol. 105
|
issue 6
667-673
EN
Recently we demonstrated growth of monocrystalline ZnO films by atomic layer epitaxy in the gas flow variant using inorganic precursors. In this study, we discuss properties of ZnO films grown with organic precursors. Successful Mn doping of the ZnO films during the growth was achieved using the Mn-thd complex. Secondary ion mass spectroscopy and X-ray investigations reveal the contents of Mn up to about 20% of the cationic component.
20
Content available remote

Zinc Oxide Semiconductor for Photonics Structures Applications

65%
Struk P., Pustelny T., Pustelny B., Gołaszewska K., Kamińska E., Piotrowska A., Borysiewicz M., Ekielski M.
|
|
issue 6
1242-1245
EN
The paper presents investigations concerning the analysis of photonic structures with grating couplers. In the paper basic theoretically information on photonic structures with grating couplers is presented. The results of numerical investigations on photonic structures with grating couplers are discussed, too. Investigations show an essential influence of the geometrical parameters of grating couplers on the effectiveness of the input and output of optic power into and out of this photonic structure. In the paper the selected results of experimental realizations of photonic structures with grating couplers based on zinc oxide ZnO are presented.
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