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An Improved 2.5 GHz Electron Pump: Single-Electron Transport through Shallow-Etched Point Contacts Driven by Surface Acoustic Waves

100%

Utko P., Gloos K., Hansen J., Lindelof P.

Acta Physica Polonica A

2003

vol. 103

issue 6

533-538

We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating surface acoustic waves beam, up to n=20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, and f the surface acoustic waves frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to beΔ I/I=±25 ppm over 0.25 mV in gate voltage, which is better than previous results.

Different Quantization Mechanisms in Single-Electron Pumps Driven by Surface Acoustic Waves

88%

Utko P., Gloos K., Bindslev Hansen J., Sørensen C., Lindelof P.

Acta Physica Polonica A

2006

vol. 110

issue 3

403-408

We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus gate-voltage characteristics. In some cases, both types of quantized steps appear simultaneously though at different current values, as if they were superposed on each other. This could indicate two independent quantization mechanisms for the acoustoelectric current.

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2 Acta Physica Polonica A

1 2006

1 2003

2 Gloos K.

2 Lindelof P.

2 Utko P.

1 Bindslev Hansen J.

1 Hansen J.

1 Sørensen C.

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An Improved 2.5 GHz Electron Pump: Single-Electron Transport through Shallow-Etched Point Contacts Driven by Surface Acoustic Waves

Different Quantization Mechanisms in Single-Electron Pumps Driven by Surface Acoustic Waves