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Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As

100%

Andrearczyk T., Wosiński T., Figielski T., Mąkosa A., Tkaczyk Z., Łusakowska E., Wróbel J., Sadowski J.

Acta Physica Polonica A

2008

vol. 114

issue 5

1049-1054

We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic Ga_{0.92}Mn_{0.08}As layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.

Vertical Electron Transport through PbS-EuS Structures

81%

Wrotek S., Dybko K., Morawski A., Mąkosa A., Wosiński T., Figielski T., Tkaczyk Z., Łusakowska E., Story T., Sipatov A., Szczerbakow A., Grasza K., Wróbel J., Palosz W.

Acta Physica Polonica A

2003

vol. 103

issue 6

629-635

Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.

Fabrication and Electrical Characterization of PbS-EuS Ferromagnetic Semiconductor Microstructures

81%

Wrotek S., Morawski A., Tkaczyk Z., Mąkosa A., Wosiński T., Dybko K., Łusakowska E., Story T., Sipatov A., Péecz B., Grasza K., Szczerbakow A., Wróbel J.

Acta Physica Polonica A

2004

vol. 105

issue 6

615-620

Current-voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10 x 10 μm^2 to 100 x 100 μm^2) ferromagnetic EuS-PbS-EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers.

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3 Acta Physica Polonica A

1 2008

1 2004

1 2003

3 Mąkosa A.

3 Tkaczyk Z.

3 Wosiński T.

3 Wróbel J.

3 Łusakowska E.

2 Dybko K.

2 Figielski T.

2 Grasza K.

2 Morawski A.

2 Sipatov A.

2 Story T.

2 Szczerbakow A.

2 Wrotek S.

1 Andrearczyk T.

1 Palosz W.

1 Péecz B.

1 Sadowski J.

Search results

Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As

Vertical Electron Transport through PbS-EuS Structures

Fabrication and Electrical Characterization of PbS-EuS Ferromagnetic Semiconductor Microstructures