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Double Injection Current Transients in a-Si:H

100%

Nekrašas N., Genevičius K., Juška G.

Acta Physica Polonica A

2008

vol. 113

issue 3

845-849

In this work we present results of both computer modelling and experimental studies of double injection current transients in amorphous hydrogenated silicon thin layers.

Ultrafast Bimolecular Recombination in Nanocrystalline Hydrogenated Silicon

76%

Nekrašas N., Sliaužys G., Juška G., Arlauskas K., Stuchlik J., Kočka J.

Acta Physica Polonica A

2005

vol. 107

issue 2

373-376

In the multilayers of hydrogenated nanocrystalline and amorphous silicon bimolecular recombination coefficient can be reduced in half, while in low-temperature hydrogenated nanocrystalline silicon samples it can be reduced by one order of magnitude. The similarity of the activation energies of both the bimolecular recombination (B) and the Langevin-type recombination (B_L) coefficients point to decisive role of tunneling in processes of meeting of electrons and holes, although the ratio B/B_L<0.01.

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2 Acta Physica Polonica A

1 2008

1 2005

2 Juška G.

2 Nekrašas N.

1 Arlauskas K.

1 Genevičius K.

1 Kočka J.

1 Sliaužys G.

1 Stuchlik J.

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Double Injection Current Transients in a-Si:H

Ultrafast Bimolecular Recombination in Nanocrystalline Hydrogenated Silicon