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Ultrathin NbN Films for Superconducting Single-Photon Detectors

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Słysz W., Guziewicz M., Borysiewicz M., Domagała J., Pasternak I., Hejduk K., Rzodkiewicz W., Ratajczak J., Bar J., Węgrzecki M., Grabiec P., Grodecki R., Węgrzecka I., Sobolewski R.

Acta Physica Polonica A

2011

vol. 120

issue 1

200-203

We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al_2O_3 and Si wafers, and SiO_2 and Si_3N_4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850°C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.

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1 Acta Physica Polonica A

1 2011

1 Bar J.

1 Borysiewicz M.

1 Domagała J.

1 Grabiec P.

1 Grodecki R.

1 Guziewicz M.

1 Hejduk K.

1 Pasternak I.

1 Ratajczak J.

1 Rzodkiewicz W.

1 Sobolewski R.

1 Słysz W.

1 Węgrzecka I.

1 Węgrzecki M.

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Ultrathin NbN Films for Superconducting Single-Photon Detectors