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Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide

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Jasiński J., Kurpiewski A., Korοna K., Kamińska M., Ρalczewska M., Krotkus A., Marcinkievicius S., Liliental-Weber Z., Tan H. H., Jagadish C.

Acta Physica Polonica A

1995

vol. 88

issue 4

747-750

Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As_{Ga}) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.

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1 Acta Physica Polonica A

1 1995

1 Jagadish C.

1 Jasiński J.

1 Kamińska M.

1 Korοna K.

1 Krotkus A.

1 Kurpiewski A.

1 Liliental-Weber Z.

1 Marcinkievicius S.

1 Tan H. H.

1 Ρalczewska M.

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Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide