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The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer

100%
Özdemir A., Abdolahpour Salari M., Kökce A., Uçar N.
Acta Physica Polonica A
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2017
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vol. 132
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issue 3
1118-1121
EN
Au/polymer P2ClAn(H₃BO₃)/n-GaAs Schottky barrier diodes, where P2ClAn stands for poly(2-chloroaniline), have been fabricated. To fabricate Schottky diodes with polymer interface, n-type GaAs wafer was used. The P2ClAn polymer solution was applied on the front face of the n-GaAs wafer by a pipette. The P2ClAn emeraldine salt was chemically synthesized by using boric acid (H₃BO₃). Schottky diode parameters, such as ideality factor, barrier height and series resistance have been measured, as functions of hydrostatic pressure, using the current-voltage technique. The ideality factor values of Au/P2ClAn/n-GaAs Schottky barrier diodes have decreased from 3.38 to 3.01, the barrier height has increased from 0.653 to 0.731 eV at 0.36 kbar and series resistances were ranging from 14.95 to 14.69. The results obtained from I-V characteristics of Au/P2ClAn/n-GaAs Schottky barrier diodes show that pressure treatment improves the rectifying properties of the diodes. These diodes can be used as pressure-sensitive capacitors, due to pressure-dependence of diode parameters.
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State-Space Modeling of an EPW in Discrete Time and an Observer Design for State Variable Estimation

100%
Özdemir A., Erdem Z., Usuman I.
Acta Physica Polonica A
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2016
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vol. 130
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issue 1
228-232
EN
The purpose of this study is to obtain the dynamic model of an electrical powered wheelchair and to estimate the state variables of right and left DC motor currents with the designed observer. First, the dynamic equations are written and then discrete-time state space model of the electrical powered wheelchair is directly obtained from this dynamic equations. Discrete time state space model of the electrical powered wheelchair is verified with the transfer function obtained using the dynamic equations. In addition, the accuracy of the estimated left and right DC motor current values are validated in the simulation results.
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On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

88%
Özdemir A., Akcan D., Lapa H., Yavuz A., Duman S.
Acta Physica Polonica A
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2015
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vol. 128
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issue 2B
B-450-B-454
EN
The frequency-dependent electrical characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/ n-GaAs Schottky barrier diodes have been investigated by using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature. Negative capacitance behavior has been observed in the C-V characteristic for each frequency. The magnitude of absolute value of C was found to increase with decreasing frequency in the forward bias region. The value of G/ω increases with decreasing frequency in the positive region. This can be attributed to the increase in the polarization at low frequencies and to the fact that more carriers are introduced into the structures. Negative capacitance phenomenon can be explained by the loss of interface charges from the occupied states below the Fermi level, caused by impact ionization process. According to obtained result, the values of C and G/ω are strong functions of frequency and applied bias voltage, particularly in the accumulation an inversion region. Doping concentration (N_{d}), diffusion potential (V_{d}), Fermi energy level (E_{f}), and barrier height (Φ_{b}(C-V)) values have been calculated from reverse bias C^{-2}-V plots for 3 MHz. Finally, the obtained value of R_{s} in the accumulation region increases with decreasing frequency.
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