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DSL Photoetching: Principles and Application to Study Nature of Defects in III-V Materials

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Weyher J.

Acta Physica Polonica A

1991

vol. 80

issue 2

149-160

After a short general description of the chemical etching of semiconductors the mechanisms of defect-selective etching are described in detail. Two distinct mechanisms that lead to the formation of etch pits and etch hillocks on dislocations emerging at a semiconductor surface are discussed. The principles of the formation of defect-related etch features are described for the HF-CrO_{3}-H_{2}O etching system used for etching of GaAs. A model of surface reactions is presented and the influence of illumination during etching on the defect-selectivity is emphasized. The use of ultra sensitive photoetching to study the nature and origin of complex defects in SI and n-like GaAs is documented. In particular, the concept for the formation of dislocation cell structure in undoped GaAs is presented and the ability of photoetching to reveal the structural changes during annealing is visualized.

Blue Laser on High N_2 Pressure-Grown Bulk GaN

21%

Grzegory I., Boćkowski M., Krukowski S., Łucznik B., Wróblewski M., Weyher J., Leszczyński M., Prystawko P., Czernecki R., Lehnert J., Nowak G., Perlin P., Teisseyre H., Purgał W., Krupczyński W., Suski T., Dmowski L., Litwin-Staszewska E., Skierbiszewski C., Łepkowski S., Porowski S.

Acta Physica Polonica A

2001

vol. 100

issue Supplement

229-232

In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).

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2 Acta Physica Polonica A

1 2001

1 1991

2 Weyher J.

1 Boćkowski M.

1 Czernecki R.

1 Dmowski L.

1 Grzegory I.

1 Krukowski S.

1 Krupczyński W.

1 Lehnert J.

1 Leszczyński M.

1 Litwin-Staszewska E.

1 Nowak G.

1 Perlin P.

1 Porowski S.

1 Prystawko P.

1 Purgał W.

1 Skierbiszewski C.

1 Suski T.

1 Teisseyre H.

1 Wróblewski M.

1 Łepkowski S.

1 Łucznik B.

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DSL Photoetching: Principles and Application to Study Nature of Defects in III-V Materials

Blue Laser on High N_2 Pressure-Grown Bulk GaN