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Damage Production in As Implanted GaAs_{1-x}P_{x}

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Krynicki J., Warchoł S., Rzewuski H., Groetzschel R.

Acta Physica Polonica A

1995

vol. 87

issue 1

249-252

Post-implantation damage in GaAs_{1-x}P_{x} compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10^{13} -8 × 10^{13} cm^{-2} at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He^{+} channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.

Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature

100%

Krynicki J., Rzewuski H., Groetzschel R., Claverie A.

Acta Physica Polonica A

1991

vol. 79

issue 2-3

349-353

Amorphization of GaAs implanted with Cd in the dose range of 2 x 10^{13}-1.2 x 10^{14} ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.

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2 Acta Physica Polonica A

1 1995

1 1991

2 Groetzschel R.

2 Krynicki J.

2 Rzewuski H.

1 Claverie A.

1 Warchoł S.

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Damage Production in As Implanted GaAs_{1-x}P_{x}

Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature