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Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy

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Anwand W., Schumann T., Brauer G., Skorupa W., Xiong S., Wu C., Gebel T.
Acta Physica Polonica A
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2008
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vol. 113
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issue 5
1273-1278
EN
Flash lamp annealing was applied to the modification of thin amorphous Si layers on SiO_2 and glass. Slow positron implantation spectroscopy was used for the characterisation of the microstructure before and after flash lamp annealing. Changes in the structure down to a depth of some micrometres below the surface observed with slow positron implantation spectroscopy will be presented and discussed.
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