In this work we present results of both computer modelling and experimental studies of double injection current transients in amorphous hydrogenated silicon thin layers.
In the multilayers of hydrogenated nanocrystalline and amorphous silicon bimolecular recombination coefficient can be reduced in half, while in low-temperature hydrogenated nanocrystalline silicon samples it can be reduced by one order of magnitude. The similarity of the activation energies of both the bimolecular recombination (B) and the Langevin-type recombination (B_L) coefficients point to decisive role of tunneling in processes of meeting of electrons and holes, although the ratio B/B_L<0.01.
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