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Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

100%

Gaubas E., Juršėnas S., Kazlauskas K., Miasojedovas S., Vaitkus J., Žukauskas A.

Acta Physica Polonica A

2005

vol. 107

issue 1

215-219

The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-exponential stage with a stretched-exponent asymptotic decay ascribed to dislocations mediated multi-trapping were distinguished by correlated examination of time-resolved photoluminescence and photoconductivity transients.

Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures

68%

Ivanov V., Godlewski M., Miasojedovas S., Juršėnas S., Kazlauskas K., Žukauskas A., Skierbiszewski C., Siekacz M., Leszczyński M., Perlin P., Suski T., Grzegory I.

Acta Physica Polonica A

2005

vol. 107

issue 2

225-229

We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.

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2 Acta Physica Polonica A

2 2005

2 Juršėnas S.

2 Kazlauskas K.

2 Miasojedovas S.

2 Žukauskas A.

1 Gaubas E.

1 Godlewski M.

1 Grzegory I.

1 Ivanov V.

1 Leszczyński M.

1 Perlin P.

1 Siekacz M.

1 Skierbiszewski C.

1 Suski T.

1 Vaitkus J.

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Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures