Search results

Sort By:

Limit search:

Optical Properties of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} Epitaxial Layers

100%

Świątek K., Piskorski M., Piotrowski T.

Photoluminescence spectra of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al_{0.20}Ga_{0.80}As_{0.02}Sb_{0.98} band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.

Materials Technology for GaSb-Based optoelectronic Devices

64%

Piotrowska A., Kamińska E., Piotrowski T., Piskorski M., Guziewicz M., Papis E., Gołaszewska-Malec K., Kasjuniuk S.

Acta Physica Polonica A

1996

vol. 90

issue 5

903-906

A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.

Refine search results

2 Acta Physica Polonica A

2 1996

2 Piotrowski T.

2 Piskorski M.

1 Gołaszewska-Malec K.

1 Guziewicz M.

1 Kamińska E.

1 Kasjuniuk S.

1 Papis E.

1 Piotrowska A.

1 Świątek K.

Search results

Optical Properties of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} Epitaxial Layers

Materials Technology for GaSb-Based optoelectronic Devices