Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 3

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Effect of Synthesis Parameters of Graphene/Fe₂O₃ Nanocomposites on Their Structural and Electrical Conductivity Properties

100%
Jedrzejewska A., Sibera D., Narkiewicz U., Pełech R., Jedrzejewski R.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 4
1424-1429
EN
Due to its fascinating properties such as high surface area, very good electrical and thermal conductivity, excellent mechanical properties, optical and electrochemical properties, graphene may be the ideal material as a substrate of nanocomposites for applications in electronics. Graphene layer can be used as a conductive matrix allowing good contact between crystallites of nanomaterials. Despite pure graphene, its composites with other species can be of interest. In this paper the results of studies on the effect of methods and parameters of synthesis, for obtaining composites graphene/Fe₂O₃ on their structural properties and electrical properties are presented. A series of experiments was conducted using a commercially available graphene (Graphene Nanopowder AO-3) and iron nitrate. The materials were obtained using two pressure methods: pressure synthesis in the autoclave and synthesis in the microwave solvothermal reactor. The syntheses were carried out in a solution of ethanol. The specific surface area, helium density, morphology, phase composition, thermal properties and electric conductivity of the obtained composites were investigated.
2
Content available remote

STM investigation of cobalt silicide nanostructures’ growth on Si(111)-(√19 Ã- √19) substrate

84%
Cegiel M., Bazarnik M., Czajka R.
Open Physics
|
2009
|
vol. 7
|
issue 2
291-294
EN
Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicides’ nanostructures created on Si(111)-(√19 Ã- √19) substrates via Co evaporation and post deposition annealing. This (√19 Ã- √19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicides’ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7Ã-7) reconstruction occurred at the cost of Si(111)-(√19 Ã- √19).
3
Content available remote

Germanium segregation in CVD grown SiGe layers

84%
Novikau A., Gaiduk P.
Open Physics
|
2010
|
vol. 8
|
issue 1
57-60
EN
A 2D layer of spherical, crystalline Ge nanodots embedded in a SiO2 layer was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission electron microscopy and Rutherford back scattering spectrometry, as well as electrically by measuring C-V and I-V characteristics. It was found that formation of a high density Ge dots took place due to oxidation induced Ge segregation. The dots were situated in the SiO2 at the average distance 5–6 nm from the substrate. Strong evidence of charge storage effect in the crystalline Ge-nanodot layer was demonstrated by the hysteresis behavior of the high-frequency C-V curves.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.