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Structure and Electron-Transport Properties of Photoresist Implanted by Sb^{+} Ions

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Vabishchevich N., Brinkevich D., Volobuev V., Lukashevich M., Prosolovich V., Sidorenko Y., Odzhaev V., Partyka J.

Acta Physica Polonica A

2011

vol. 120

issue 1

46-48

Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × 10^{15} ÷ 5 × 10^{16} cm^{-2} with the ion current density 4 μA/cm^2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.

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1 Acta Physica Polonica A

1 2011

1 Brinkevich D.

1 Lukashevich M.

1 Odzhaev V.

1 Partyka J.

1 Prosolovich V.

1 Sidorenko Y.

1 Vabishchevich N.

1 Volobuev V.

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Structure and Electron-Transport Properties of Photoresist Implanted by Sb^{+} Ions