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Ultrathin Niobium in the Si/Nb/Si Trilayers

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EN
We study magnetotransport properties of the Si/Nb/Si trilayers, in which the thickness of niobium, d, changes from 1.1 nm to 50 nm, while the thickness of Si is fixed at 10 nm. The niobium films are amorphous for d < 4 nm, while in thicker films the alligned polycrystalline grains are formed. We observe that the Hall coefficient changes sign into negative in the films with d < 1.6 nm. We also find that in the ultrathin films the magnetic field induces a transition from the superconducting into a metallic phase with the resistance smaller than the normal-state resistance.
EN
We use pulsed laser deposition to grow YBa_2Cu_3O_{7-δ} (YBCO) superconducting films for microwave applications. The films are grown on R-cut sapphire substrates, with CeO_2 buffer layers, which are re-crystallized at high temperature prior to YBCO growth. Using the atomic force microscopy (AFM) and X-ray diffractometry we determine the optimal temperature for recrystallization (1000°C) and the optimal buffer layer thickness (30 nm). The properties of YBCO films of various thickness, grown on the optimized CeO_2 buffer layers, are studied using several methods, including AFM, magnetooptical imaging, and transport experiments. The YBCO film roughness is found to increase with the increasing film thickness, but the magnetic flux penetration in the superconducting state remains homogeneous. The superconducting parameters (the critical temperature and the critical current density) are somewhat lower than the similar parameters for YBCO films deposited on mono-crystalline substrates.
EN
In this work we study the growth, by pulsed laser deposition, of YBa_2Cu_3O_{7-δ} (YBCO) films on the CeO_2-buffered R-cut sapphire substrates, with the buffer layer recrystallized prior to the deposition of superconductor. We find that the superconducting critical temperature and the critical current density of the films are very close to similar parameters for the YBCO films grown on lattice-matched single crystalline substrates. It appears that the structural defects in the buffer layer affect the microstructure of YBCO films, resulting in high values of the critical current density, suitable for applications.
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