Search results

Sort By:

Limit search:

Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

100%

Starikov E., Shiktorov P., Gružinskis V., Varani L., Vaissière J., Palermo C., Reggiani L.

Acta Physica Polonica A

2005

vol. 107

issue 2

408-411

Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A_3B_5 compounds. This property is favorable for applications of nitrides in the THz frequency range.

Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

84%

Shiktorov P., Starikov E., Gružinskis V., Varani L., Vaissière J., Reggiani L., Pérez S., González T.

Acta Physica Polonica A

2005

vol. 107

issue 2

396-399

We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.

Refine search results

2 Acta Physica Polonica A

2 2005

2 Gružinskis V.

2 Reggiani L.

2 Shiktorov P.

2 Starikov E.

2 Vaissière J.

2 Varani L.

1 González T.

1 Palermo C.

1 Pérez S.

Search results

Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits