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1

Intra-Shallow-Donor Photoconductivity in Semi-Insulating GaAs

100%

Karpierz K., Sadowski M.

Acta Physica Polonica A

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1991

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vol. 79

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issue 1

121-124

EN

The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p_{+1} transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs.

2

Magnetophotoconductivity Due to Intra-Shallow-Donor Transitions in Semi-Insulating GaAs

81%

Karpierz K., Sadowski M., Grynberg M.

Acta Physica Polonica A

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1991

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vol. 80

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issue 2

291-294

EN

The paper concerns investigations of shallow centres in semi-insulating (SI) GaAs samples. A very sensitive measuring method - magnetophotoconductivity due to intra-shallow-donor transitions - was used. We report the behaviour of intra-impurity transitions as well as an additional structure in low magnetic fields for different far-infrared wavelengths (70.6 μm, 96.5 μm, 118.8 μm, 163 µm). The results are discussed in terms of a fluctuating potential from ionized centres in SI GaAs. The physical mechanism responsible for the low magnetic field structure is proposed.

3

The second layer neurones of the entorhinal cortex and the perforant path in physiological agening and Alzheimer's disease

71%

Morys J., Sadowski M., Barcikowska M., Maciejewska B., Narkiewicz O.

Acta Neurobiologiae Experimentalis

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1994

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vol. 54

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issue 1

47-53

4

Infrared Spectroscopy of GaAs Doped with Mn

52%

Rutkowska A., Wasik D., Witowski A., Sadowski M., Orłowski W., Strzelecka G., Hruban A., Kamińska M., Twardowski A., Potemski M.

Acta Physica Polonica A

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2005

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vol. 108

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issue 5

845-849

EN

We found that the fine structure related to Lyman spectra of [Mn^{2+}(d^5) + a hole] centers in GaAs was present only for samples with low Mn concentration. Such samples, at low temperature, did not show any hopping conductance within Mn impurity band. Magnetooptical measurements revealed that magnetic field induced splitting of the Lyman optical transitions was larger than Zeeman splitting observed for typical shallow acceptors in GaAs, like Be, Zn, and C. This experimental result proved that in the case of Mn acceptor impurity, the exchange coupling of a hole and the S = 5/2 Mn^{2+}(d^5) core could not be neglected, which was in accordance with the [Mn^{2+}(d^5) + a hole] model of the neutral Mn center in GaAs.

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Intra-Shallow-Donor Photoconductivity in Semi-Insulating GaAs

Magnetophotoconductivity Due to Intra-Shallow-Donor Transitions in Semi-Insulating GaAs

The second layer neurones of the entorhinal cortex and the perforant path in physiological agening and Alzheimer's disease

Infrared Spectroscopy of GaAs Doped with Mn