Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Publication available in full text mode
Content available

Dopants in Semiconductors Studied by Perturbed Angular Correlation

100%
Bartels J., Lorenz K., Ruske F., Tessema G., Vianden R.
Acta Physica Polonica A
|
2001
|
vol. 100
|
issue 5
585-602
EN
Theγ-γ perturbed angular correlation technique is a very powerful tool for the investigation of dopant incorporation and damage recovery after implantation in semiconductors. The basic principles of the technique will be introduced followed by a discussion of its strengths and limitations. Examples of its application will be given, ranging from cavities in silicon, effects of uniaxial stress on acceptor-donor pairs in silicon to damage recovery in nitride semiconductors like GaN.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.