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1

Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction

100%

Teisseyre H., Szymański M., Khachapuridze A., Skierbiszewski C., Feduniewicz-Żmuda A., Siekacz M., Łucznik B., Kamler G., Kryśko M., Suski T., Perlin P., Grzegory I.

Acta Physica Polonica A

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2007

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vol. 112

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issue 2

467-472

EN

The intention of this work is to discuss and report on our research on nonpolar laser structures grown on bulk GaN crystal substrates along the (11¯20) nonpolar direction. The main advantages of such nonpolar structures are related to the elimination of the built-in electric fields present in commonly used systems grown along the polar (0001) axis of nitride crystals. We demonstrated the optically pumped laser action on separate confinement heterostructures. Laser action is clearly shown by spontaneous emission saturation, abrupt line narrowing, and strong transversal electric polarization of output light. The lasing threshold was reached at an excitation power density of 260 kW/cm^2 for a 700μm long cavity (at room temperature).

2

High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE

100%

Skierbiszewski C., Siekacz M., Wiśniewski P., Perlin P., Feduniewicz-Żmuda A., Cywiński G., Smalc J., Grzanka S., Grzegory I., Leszczyński M., Porowski S.

Acta Physica Polonica A

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2006

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vol. 110

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issue 3

345-351

EN

Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm^2 and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.

3

Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

100%

Cywiński G., Skierbiszewski C., Feduniewicz-Żmuda A., Siekacz M., Nevou L., Doyennette L., Julien F., Prystawko P., Kryśko M., Grzanka S., Grzegory I., Porowski S.

Acta Physica Polonica A

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2006

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vol. 110

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issue 2

175-181

EN

Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.

4

Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells

100%

Cywiński G., Skierbiszewski C., Siekacz M., Kryśko M., Feduniewicz-Żmuda A., Gladysiewicz M., Kudrawiec R., Misiewicz J., Nevou L., Kheirodin N., Julien F.

Acta Physica Polonica A

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2008

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vol. 114

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issue 5

1093-1099

EN

GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.

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4 Acta Physica Polonica A

1 2008

1 2007

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4 Feduniewicz-Żmuda A.

4 Siekacz M.

4 Skierbiszewski C.

3 Cywiński G.

3 Grzegory I.

3 Kryśko M.

2 Grzanka S.

2 Julien F.

2 Nevou L.

2 Perlin P.

2 Porowski S.

1 Doyennette L.

1 Gladysiewicz M.

1 Kamler G.

1 Khachapuridze A.

1 Kheirodin N.

1 Kudrawiec R.

1 Leszczyński M.

1 Misiewicz J.

1 Prystawko P.

1 Smalc J.

1 Suski T.

1 Szymański M.

1 Teisseyre H.

1 Wiśniewski P.

1 Łucznik B.

Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction

High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE

Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells