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Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering

100%
Pődör B.
Acta Physica Polonica A
|
2005
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vol. 108
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issue 5
837-844
EN
Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a~ T^{-1/2} like temperature dependence dominated the hole mobility in the investigated temperature range.
2
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Activated Transport in Magnetic-Field Induced Insulating Phase in Two-Dimensional Electron Gas in InGaAs/InP Heterostructures

39%
Pődör B., Gombos G., Reményi G., Kovács G., Savel'ev I. G., Novikov S. V.
Acta Physica Polonica A
|
1997
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vol. 92
|
issue 5
945-949
EN
We report on experiments on low temperature (millikelvin range) activated magnetotransport on low-density two-dimensional electron systems in InGaAs/InP for Landau level filling factors 0.25 ≤ ν ≤ 0.55. The activation energy increases approximately linearly with decreasing filling factor. The observations are discussed in the light of the formation of the Wigner solid.
3
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Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

39%
Kreshchuk A., Novikov S., Savel'ev I., Polyanskaya T., Pődör B., Reményi G., Kovács G.
Acta Physica Polonica A
|
1998
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vol. 94
|
issue 3
415-420
EN
The energy relaxation in two-dimensional electron gas in In_{0.53}Ga_{0.47}As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h_{14}=(1.1±0.1)×10^{7} V/cm. Available data for the piezoelectric constant of In_{x}Ga_{1-x}As are discussed in the light of the results of this work.
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