The monovacancy formation energy in Sn-17 wt.% In and Sn-32 wt.% In was determined on the basis of the temperature dependence of the peak counting rate for these alloys. A sudden increase in the counting rate was observed between solidus and liquidus temperature. This phenomenon is connected with the formation of large defects acting as positron traps.
Positron annihilation characteristics as a function of composition and annealing in zinc vapour were measured and compared with photoluminescence spectra for Zn_{1-x}Mg_{x}Se mixed crystals with 0 ≤ x ≤ 0.6. The positron annihilation data show that there is a substantial number of divacancies present in the system under study. The concentration of such defects is reduced at least by the factor of two upon annealing in zinc vapour.
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