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Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique

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Jia G.-Z., Yao J.-H., Shu Y.-C., Xing X.-D., Pi B.

Acta Physica Polonica A

2009

vol. 115

issue 5

944-946

The superlattice-in-well structures were grown using a cycled submonolayer AlGaAs/GaAs deposition technique. The optical quality of Al-Ga interdiffusion in AlGaAs/GaAs superlattice was investigated by measuring the photoluminescence of samples grown at temperature from 610°C to 630°C. Results show that Al composition can be modulated under some growth temperature or period. Effect of the growth interrupt in the growth process of superlattice on film optical quality is also discussed. Especially, the role played by the period of superlattice in the process of obtaining high quality film material with low composition is investigated in detail.

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1 Acta Physica Polonica A

1 2009

1 Jia G.-Z.

1 Pi B.

1 Shu Y.-C.

1 Xing X.-D.

1 Yao J.-H.

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Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique