Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 4

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Spectra of Wideband Dipole Radiation Induced by the Photomagnetoelectric Response in Narrow Gap Semiconductors

100%
Kiprijanovič O., Shatkovskis E., Kiprijanovič L.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 4
761-767
EN
The frequency spectra of sign inverted photomagnetoelectric responses in narrow gap semiconductors InSb, InAs, and Cd_{0.2}Hg_{0.8}Te, excited by nanosecond laser light pulses, were used for calculation of induced electromagnetic radiation frequency spectra in dipole approximation. The parallelepiped shape sample was considered as capacitor-like point dipole. The known Fourier transform property was used in calculations. Features of double sign inverted signals formation and its spectra are considered and compared with experimental results. The radiation of pulses, having spectra in terahertz range when excited by picosecond laser pulse from capacitor-like radiators that demonstrate double sign inverted photoresponses, is expected.
2
Content available remote

Improved Performance and Spectral Features of Complex Porous Silicon Structure Containing Silicon Solar Cells

100%
Shatkovskis E., Mitkevičius R., Zagadskij V., Stupakova J.
Acta Physica Polonica A
|
2012
|
vol. 122
|
issue 6
1121-1124
EN
This work presents porous silicon technology, adapted to improve the characteristics of monocrystalline silicon solar cell. This is achieved by taking advantage of properties provided by porous silicon technology in production of diverse structures in the material. We produce a porous silicon derivative, which is mostly hidden in the emitter of solar cell. Research of the initial and modified solar cells was made by measuring current-voltage characteristics under illumination of a 5000 K xenon lamp. Spectrally resolved studies of current-voltage characteristics were carried out using radiation of halogen lamps and diffraction grating monochromator. Studies revealed that the manufacturing of buried porous silicon structure improves solar cell performance by increasing the fill factor of the modified solar cell current-voltage characteristics, maximum output power and efficiency, when compared to unmodified ones. Spectral studies revealed that the above-mentioned improvement differs for various sections of light spectrum. Largest relative enhancement of solar cell current was observed at the wavelengths of Δ λ = 450-550 nm. We consider the cumulative result of several effects resulting in solar cell efficiency enhancement. Most of them were the influence of porosity on effective optical path length and better anti-reflecting properties of multiple porous structures.
3
Publication available in full text mode
Content available

Ultrahigh Frequency Components in the Hot Electron Photomagnetoelectric Response of Strongly Photoexcited Narrow-Gap Semiconductors

100%
Shatkovskis E., Galickas A., Kiprijanovič O.
Acta Physica Polonica A
|
2005
|
vol. 107
|
issue 2
271-274
EN
A photomagnetoelectric effect has been investigated in semiconductors InAs and Cd_xHg_{1-x}Te (x=0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double-sign-inversion when the intensity of the exciting light pulses exceeds a critical value I_c=5×10^{24} photons/(cm^2 s) for InAs and (1-4)×10^{24} photons/(cm^2 s) for Cd_xHg_{1-x}Te samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened significantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration t_{opt} 1-10 ps the photomagnetoelectric signal in the terahertz range may be generated.
4
Publication available in full text mode
Content available

Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation

76%
Stupakova J., Ašmontas S., Gradauskas J., Zagadskij V., Shatkovskis E., Sužiedėlis A.
Acta Physica Polonica A
|
2006
|
vol. 110
|
issue 6
817-822
EN
Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.