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1
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On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers

100%
Dobaczewski L., Maude D., Missous M., Portal J.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
201-204
EN
Electronic transport phenomena in molecular beam epitaxy grown sil­icon δ-doped AlGaAs/GaAs quantum wells and GaAs layers were investi­gated. Observations of the Shubnikov-de Haas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual sub-band mobilities and carrier concentrations were studied and the manifesta­tion of the DX centres was demonstrated.
2
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Molecular Beam Epitaxy of Al_{x}Ga_{1-x}Sb and Al_{x}Ga_{1-x}As: New Donor Doping Sources

100%
Dobaczewski L., Missous M., Singer K., Żytkiewicz Z.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
826-828
EN
The first results obtained with the use of Ga_{2}S_{3} and Ga_{2}Se_{3} compounds as sources of donor elements for molecular beam epitaxy of Al_{x}Ga_{1-x}Sb (0 ≤ x ≤ 1) and Al_{x}Ga_{1-x}As (0 ≤ x ≤ 0.4) are reported. In GaAs free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three orders of magnitude. For Al_{x}Ga_{1-x}Sb it was possible to compensate the high concentration of native acceptors and to obtain n-type of conductivity.
3
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Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions

100%
Dobaczewski L., Langer J., Missous M.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
741-744
EN
The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level.
4
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Hole-Related Electrical Activity of InAs/GaAs Quantum Dots

76%
Kruszewski P., Dobaczewski L., Markevich V., Mitchell C., Missous M., Peaker A.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1201-1206
EN
We present the hole-related electrical activity of the InAs quantum dots embedded in the n-type GaAs. We performed our experiments with the use of the Laplace and conventional deep level transient spectroscopies combined with the above GaAs band-gap illumination. We observed that depending on temperature and electric field the hole emission process is an interplay between the pure thermal emission and tunnelling processes. The tunnelling was quantitatively described by a simple model of the potential barrier.
5
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Formation of the DX State by Donors in Al_{x}Ga_{1-x}As - Experiment

76%
Dobaczewski L., Kaczor P., Missous M., Żytkiewicz Z., Dobosz D., Peaker A.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
905-907
EN
A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.
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