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2007
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issue 1
203-214
EN
Among anionic surfactants, two of the major groups in current use are linear alkylbenzene sulphonates and alkyl ether sulphates. They pass into the wastewater treatment plants, where they are usually aerobically degraded, and next their remnants and biodegradation products enter the environment. The influence of wastewater containing the anionic surfactants at concentrations from 0.5 to 58 mg L-1 on seed germination was investigated. The tested wastewater came from the lab-scale biodegradation experiments conducted in the continuous flow system. Four different plants: mustard (Sinapsis alba), cress (Lepidium sativum), rye (Secale cereale) and wheat (Triticum aestivum) were employed in the tests. In order to evaluate the inhibition of seed germination, the germination index was calculated. It occurred that sodium alkylbenzene sulphonate inhibited seed germination of the rapidly growing plants (mustard and cress), starting with 10 mg L-1 in the effluent, while sodium alkyltrioxyethylene sulphate exerted the toxic effect at the concentrations above 30 mg L-1 for all tested plants. Mustard (Sinapsis alba) was most sensitive to the anionic surfactants exposure and could be used as a bioindicator within the phytotoxicity tests concerning anionics.
EN
Magnetic hysteresis and magnetoresistance of [Ni_{80}Fe_{20}/Au/Co/Au]_{10} multilayers displaying giant magnetoresistance and sputtered on a flexible polypropylene substrates (an adhesive tape) is investigated. The magnetoresistive properties are very similar to those found in films prepared under the same conditions on Si(100) substrates. It is demonstrated, too, that a bendability of the substrates can be utilized to form cylindrically shaped magnetoresistive sensors with reduced anisotropy of the effect.
EN
Hysteresis loops of thin films of Fe_{73.5}Cu_{1}R_{3}Si_{13.5}B_{9} (R = Nd, Gd, Ho, Y) alloys were studied by the magnetooptical Faraday method. The films were deposited by flash evaporation technique onto cooled glass substrates. Lanthanides were chosen as substitutes for niobium in the FINEMET type alloys. Coercivity, H_{c}, was determined from the easy- and hard-axis hysteresis loops. The as-deposited films containing Gd and Ho are characterized by rather low values of H_{c} while the films with Nd and Y show a high isotropic value of H_{c}. Attempts were made to determine the conditions of the film annealing which would ensure the optimum soft magnetic properties of the films studied.
EN
We show that in a [Co_1/Au/Co_2/Au]_4 multilayer, where Co_{1(2)} denote Co layers of different thicknesses, a 10 keV He-ion bombardment with a 6×10^{14} ions cm^{-2} dose leads to changes of the easy direction from out-of-plane to in-plane in the thicker Co layers (t_{Co2} = 1 nm) while the perpendicular anisotropy of the thinner Co layers (t_{Co1} = 0.6 nm) is preserved. The investigated multilayers were obtained by sputtering and the thickness of the Au layers (t_{Au} = 4 nm) ensured that a direct coupling between the Co layers (through pinholes) and Ruderman-Kittel-Kasuya-Yosida-like interactions were negligible.
EN
The correlation between magnetostatic or Néel's coupling and roughness of interfaces in sputtered Cu/Py/V/Py/MnIr/Cu multilayers was investigated with the help of atomic force microscopy and magnetometry. It is shown that the coupling strongly depends on the roughness of seed Cu layer which in turn depends on sputtering power. Roughness levels off after deposition of consecutive layers to about 0.2 nm rms.
6
71%
EN
We consider a hybrid three-terminal structure consisting of a quantum dot coupled to three leads, two normal and one superconducting. The current flowing between one of the normal and the superconducting electrodes induces voltage in the other normal (floating) electrode. The value of the induced voltage depends on the position of the Andreev levels in the quantum dot and is a measure of the interplay between the electron transfer and the subgap anomalous reflection processes. When the crossed (i.e. non-local) Andreev reflections dominate the induced potential in the normal electrode becomes negative. This situation occurs for the relatively strong coupling to the superconducting electrode and only outside the Coulomb blockade region. Taking the superconducting electrode as the voltage probe one gets additional information on competition of injected carriers.
EN
The influence of repetition number N on magnetoresistance, magnetic reversal and structure of sputtered (Ni_{80}Fe_{20}/Au/Co/Au)_N multilayers was investigated. The multilayers are characterized by in-plane (Ni_{80}Fe_{20}) and out-of-plane (Co) magnetic anisotropy of ferromagnetic layers and show considerable magnetoresistance effect (ΔR/R) of the giant magnetoresistance type. Increased N results in an enhancement of ΔR/R from about 0.5% for N=1 up to above 5% for N=15. This enhancement is caused by: diminishing the role of electron scattering at the surfaces, decreasing the effect of structural imperfection and the lack of the perpendicular anisotropy of Co layer in the first period. The interpretation is corroborated by low ΔR/R value observed for N=1 and an evolution of the ΔR(H)/R dependence with increasing N. The anisotropy field of Co layers also increases with N.
8
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Magneto-Optical Study of NiFe/Au/Co/Au Layers

62%
EN
Sputtered NiFe/Au/Co/Au layers with noncollinear magnetizations are of scientific interest for unusual magnetization behavior and their potential application in spintronics. In this paper, we propose to use a material selective sensitivity of magneto-optical Kerr effect for separation of signals from different materials in a bilayer system. The materials selective sensitivity is demonstrated on a sample with two mutually perpendicular Co and NiFe wedges.
EN
The influence of temperature and annealing on giant magnetoresistance of Si(100)/Cu(20 nm)/Py(2 nm)/(Cu(2 nm)/Py(2 nm))_{100} multilayer (Py = Ni_{83}Fe_{17}) sputtered at room temperature in double face-to-face configuration is reported. It was found that giant magnetoresistance value, ΔR_{GMR}/R_{sat} (where R_{sat} is the resistance in saturation), monotonically decreases with increasing temperature (4.5% at 173 K to about 1% at 373 K). This results from the decrease in magnetic change of resistance, ΔR_{GMR}, and to the lesser extent from an increase in R_{sat}, though both of them are caused by the shortening of electrons mean free path. The observed almost linear decrease in giant magnetoresistance saturation field with increasing temperature is explained by temperature changes of magnetization profile. Vibrating sample magnetometer measurements revealed that the increase in temperature results in pronounced decrease in remnant to saturation magnetization ratio (M_{r}/M_{s}) suggesting that at low temperatures magnetic bridges between Py layers play an important role in magnetization process. It is shown that proper annealing, by an annihilation of bridges and/or lateral decoupling, leads to an increase in giant magnetoresistance ratio from 3.4% in as deposited state to 4.7%.
EN
We report on hard and soft X-ray reflectivity investigations of (Ni_{80}Fe_{20} (2.2 nm)/Au(2.3 nm)/Co(0.8 nm)/Au(2.3 nm))_{10} multilayers. Specular reflectivity curves were measured with Cu K_{α} radiation and circularly polarized synchrotron radiation tuned to Co L_{3} and Ni L_{3} absorption edges. Structural properties of the multilayers were determined from the hard X-ray reflectivity curve. Comparison of reflectivity curves taken at different photon energies shows: (i) small difference in peak positions in dependence of reflectivity versus scattering vector q, (ii) different shapes of satellite Bragg peaks, (iii) different ranges of q for appearance of the Kiessig fringes. Analysis of soft X-ray reflectivity curves taken as a function of magnetic field allows to determine magnetic properties of Co and NiFe layer specifically.
EN
The influence of He^+ ion bombardment on magnetoresistance, magnetization reversal and domain structure of sputtered (Ni_{80}Fe_{20}(2 nm)/Au(2 nm)/Co(0.6 nm)/Au(2 nm))_{10} multilayers was investigated. The samples were bombarded using He^+(30 keV) ions with fluences D varied from 10^{13} to 3×10^{16} He^+/cm^{2}. With increasing D the following changes in magnetic properties were observed: (i) exponential decay of the saturation field of Co layers, (ii) progressive decrease in magnetoresistance as a result of degradation of Co layers perpendicular anisotropy, (iii) linear decrease in stripe domain period with log(D).
EN
The influence of He⁺ (10 keV) ion bombardment on magnetic properties of sputter deposited Ni_{80}Fe_{20}/Au/Co/Au layered films was studied. The variable parameters were the thickness of the Co layer or Au spacer and the ion dose. The magnetooptical Kerr measurements were performed on samples with wedge shaped Co or Au layers. With increasing dose of helium ions the following changes in magnetic properties were observed: (i) a decrease in the Co thickness range corresponding to the perpendicular anisotropy, (ii) a decrease in the coercive field (H_C), (iii) an increase in the ferromagnetic coupling between ferromagnetic layers.
EN
The magnetic structure of Ni_{80}Fe_{20}/Au/Co/Au multilayers characterized by easy-plane and easy-axis perpendicular to the sample plane anisotropies for NiFe and Co, respectively, is strongly modified by magnetostatic coupling resulting from stray fields of stripe domains in the Co layers. Using complementary methods it will be shown that the magnetostatic coupling increases with decreasing Au spacer thickness, with the weakening of the easy plane anisotropy of the NiFe layers and with increasing thickness of the Co layers.
EN
Sputter deposited (Ni_{80}Fe_{20}/Au/Co/Au)_{10} multilayers, characterized by alternating in-plane and perpendicular anisotropies of the NiFe and Co layers, respectively, and out-of-plane stripe (labyrinth) domain structure in the Co layers, were bombarded by He^+-ions (10 keV) through a mask consisting of polystyrene nanospheres with a diameter of 470 nm. The changes of multilayers magnetic properties after ion bombardment are correlated with the used mask structure.
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