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Development of CdTe/Cd_{1-x}Mg_{x}Te Double Barrier, Single Quantum Well Heterostructures for Resonant Tunneling

100%
Reuscher G., Keim M., Fischer F., Waag A., Landwehr G.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
885-888
EN
We report the first observation of resonant tunneling through a CdTe/Cd_{1-x}Mg_{x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K.
2
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Optically Detected SdH Oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te Modulation Doped Quantum Wells

100%
Shen J. X., Ossau W., Fischer F., Waag A., Landwehr G.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
1033-1037
EN
Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts.
3
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Doping of the Wide-Gap Semiconductor Cd_{1-x}Mg_{x}Te During Molecular Beam Epitaxy

86%
Fischer F., Litz T., Waag A., Heinke H., Scholl S., Gerschütz J., Landwehr G.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
487-491
EN
We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are con­sidered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.
4
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Optical Anisotropy of ZnSe/BeTe Superlattices Probed by Excitonic Spectroscopy

73%
Platonov A., Kochereshko V., Ivchenko E., Yakovlev D., Ossau W., Fischer F., Waag A., Landwehr G.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
479-482
EN
Photoluminescence spectra of type-II ZnSe/BeTe superlattices were studied. A linear polarised photoluminescence has been found in the spectral range of spatially indirect exciton transitions. This observation is interpreted in a model of optical anisotropy of heterostructures with no-common atom at interfaces.
5
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Exciton States in Type-II ZnSe/BeTe Quantum Wells

73%
Platonov A. V., Yakovlev D. R., Zehnder U., Kochereshko V. P., Ossau W., Fischer F., Litz T., Waag A., Landwehr G.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
953-957
EN
We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction.
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